Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2006.874128
DC Field | Value | |
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dc.title | Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode | |
dc.contributor.author | Li, R. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Yao, H.B. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Yu, M.B. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:35:21Z | |
dc.date.available | 2014-10-07T04:35:21Z | |
dc.date.issued | 2006-06 | |
dc.identifier.citation | Li, R., Lee, S.J., Yao, H.B., Chi, D.Z., Yu, M.B., Kwong, D.L. (2006-06). Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode. IEEE Electron Device Letters 27 (6) : 476-478. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.874128 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82942 | |
dc.description.abstract | Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs. © 2006 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2006.874128 | |
dc.source | Scopus | |
dc.subject | Germanium | |
dc.subject | High-κ | |
dc.subject | Metal gate | |
dc.subject | MOSFET | |
dc.subject | Schottky | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2006.874128 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 27 | |
dc.description.issue | 6 | |
dc.description.page | 476-478 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000238070500017 | |
Appears in Collections: | Staff Publications |
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