Please use this identifier to cite or link to this item:
|Title:||Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode|
|Source:||Li, R., Lee, S.J., Yao, H.B., Chi, D.Z., Yu, M.B., Kwong, D.L. (2006-06). Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode. IEEE Electron Device Letters 27 (6) : 476-478. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.874128|
|Abstract:||Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs. © 2006 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2018
WEB OF SCIENCETM
checked on Jan 16, 2018
checked on Feb 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.