Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.874128
Title: Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
Authors: Li, R.
Lee, S.J. 
Yao, H.B.
Chi, D.Z.
Yu, M.B.
Kwong, D.L.
Keywords: Germanium
High-κ
Metal gate
MOSFET
Schottky
Issue Date: Jun-2006
Citation: Li, R., Lee, S.J., Yao, H.B., Chi, D.Z., Yu, M.B., Kwong, D.L. (2006-06). Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode. IEEE Electron Device Letters 27 (6) : 476-478. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.874128
Abstract: Schottky source/drain (S/D) transistors using Pt-germanide and HfO2/TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved ID-VD characteristics and much suppressed Ioff compared to Ni-germanide and conventional heavily doped S/D MOSFETs. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82942
ISSN: 07413106
DOI: 10.1109/LED.2006.874128
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