Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2013.2270350
Title: Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks
Authors: Duttagupta, S.
Ma, F.-J. 
Lin, S.F.
Mueller, T.
Aberle, A.G. 
Hoex, B. 
Keywords: Aluminum oxide/silicon nitride (AlOx/SiN x) stacks
boron-doped emitters
crystalline silicon
phosphorus-doped emitters
plasma-enhanced chemical vapor deposition (PECVD)
surface passivation
Issue Date: 2013
Citation: Duttagupta, S., Ma, F.-J., Lin, S.F., Mueller, T., Aberle, A.G., Hoex, B. (2013). Progress in surface passivation of heavily doped n-type and p-type silicon by plasma-deposited AlO x/SiNx dielectric stacks. IEEE Journal of Photovoltaics 3 (4) : 1163-1169. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2270350
Abstract: We report an outstanding level of surface passivation for both n + and p+ silicon by AlO x/SiNx dielectric stacks deposited in an inline plasma-enhanced chemical vapor deposition (PECVD) reactor for a wide range of sheet resistances. Extremely low emitter saturation current densities (J-{0e}) of 12 and 200 fA/cm2 are obtained on 165 and 25 Ω/sq n+ emitters, respectively, and 8 and 45 fA/cm2 on 170 and 30 Ω/sq p + emitters, respectively. Using contactless corona-voltage measurements and device simulations, we demonstrate that the surface passivation mechanism on both n+ and p+ silicon is primarily due to a relatively low interface defect density of
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/82937
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2013.2270350
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