Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1471377
Title: Pressure-induced resonant Raman scattering in Ge/Si islands
Authors: Teo, K.L. 
Qin, L.
Shen, Z.X. 
Schmidt, O.G.
Issue Date: 22-Apr-2002
Citation: Teo, K.L., Qin, L., Shen, Z.X., Schmidt, O.G. (2002-04-22). Pressure-induced resonant Raman scattering in Ge/Si islands. Applied Physics Letters 80 (16) : 2919-2921. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1471377
Abstract: Self-assembled Ge islands grown by solid-source molecular-beam epitaxy were investigated by resonant Raman scattering under hydrostatic pressure at room temperature. We utilize the effect of pressure to tune the electronic transition through laser excitation energies in the Ge islands. The pressure coefficient of this resonating electronic transition thus obtained is ∼2.7±0. 5meV/kbar, which is significantly smaller than the pressure shift of the E l transition in bulk Ge. This is attributed to the fact that the Ge islands are strongly constrained by the surrounding Si lattice, leading to a smaller deformation as compared to the bulk Ge, when subjected to the same pressure. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82927
ISSN: 00036951
DOI: 10.1063/1.1471377
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