Please use this identifier to cite or link to this item:
|Title:||Pressure-induced resonant Raman scattering in Ge/Si islands|
|Authors:||Teo, K.L. |
|Citation:||Teo, K.L., Qin, L., Shen, Z.X., Schmidt, O.G. (2002-04-22). Pressure-induced resonant Raman scattering in Ge/Si islands. Applied Physics Letters 80 (16) : 2919-2921. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1471377|
|Abstract:||Self-assembled Ge islands grown by solid-source molecular-beam epitaxy were investigated by resonant Raman scattering under hydrostatic pressure at room temperature. We utilize the effect of pressure to tune the electronic transition through laser excitation energies in the Ge islands. The pressure coefficient of this resonating electronic transition thus obtained is ∼2.7±0. 5meV/kbar, which is significantly smaller than the pressure shift of the E l transition in bulk Ge. This is attributed to the fact that the Ge islands are strongly constrained by the surrounding Si lattice, leading to a smaller deformation as compared to the bulk Ge, when subjected to the same pressure. © 2002 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 15, 2018
WEB OF SCIENCETM
checked on May 8, 2018
checked on Feb 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.