Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/19/8/007
Title: Practical superjuction MOSFET device performance under given process thermal cycles
Authors: Zhong, H.
Liang, Y.C. 
Samudra, G.S. 
Yang, X.
Issue Date: Aug-2004
Citation: Zhong, H., Liang, Y.C., Samudra, G.S., Yang, X. (2004-08). Practical superjuction MOSFET device performance under given process thermal cycles. Semiconductor Science and Technology 19 (8) : 987-996. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/19/8/007
Abstract: The performance of specific on-state resistance (Ron.sp) versus breakdown voltage (Vbr) of a superjunction power MOSFET device is constrained by the quality of its sidewail junctions formed by neighbouring p and n columns in the drift region. The p-n junction quality, which is inevitably affected by the inter-column dopant diffusion in practice, will limit the Ron.sp-Vbr device performance if no compensation measure is taken. A detailed study of the influence of sidewall junction quality on performance at various column widths under given thermal process conditions was carried out through process and device simulations. The study discovers the practical optimal performance of superjunction (SJ) DMOS and UMOS structures under the influence of dopant inter-column diffusion. Analysis of the phenomenon shows that the degradation of the breakdown voltage is caused by the p and n column charge imbalance. Practical SJ performance equations, which model the influence reasonably well, are derived in the paper. These equations can be used to predict the practical performance of an SJ device under given thermal conditions, which in turn guides us to the compensation measures required to achieve better performance.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82921
ISSN: 02681242
DOI: 10.1088/0268-1242/19/8/007
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

24
checked on Jul 17, 2018

WEB OF SCIENCETM
Citations

20
checked on Jul 9, 2018

Page view(s)

33
checked on Jun 8, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.