Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2021351
Title: Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
Authors: Lee, R.T.P. 
Chi, D.Z.
Yeo, Y.-C. 
Keywords: External resistance
FinFET
Platinum germanosilicide
Schottky barrier
Issue Date: 2009
Citation: Lee, R.T.P., Chi, D.Z., Yeo, Y.-C. (2009). Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs). IEEE Transactions on Electron Devices 56 (7) : 1458-1465. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2021351
Abstract: In this paper, platinum germanosilicide (PtSiGe) was investigated extensively as an alternative to nickel germanosilicide (NiSiGe) for contact formation on silicon-germanium (SiGe) source/drain (S/D) stressors. We show that PtSiGe has superior thermal and morphological stability as compared to NiSiGe. Our results further show that the formation of PtSiGe yields a low hole barrier height ΦB P of 215 meV in a self-aligned process. We also demonstrated the integration of PtSiGe contacts in FinFET devices. FinFETs with PtSiGe contacts achieve a 27% reduction in external resistance (REXT compared to FinFETs with NiSiGe contacts. Statistical comparison reveals that the drive current performance is enhanced by 21% while maintaining comparable control of short-channel effects. These results illustrate the potential of forming contacts with low Schottky barrier heights using PtSiGe in strained transistors with SiGe S/D stressors, thereby reducing REXT and extending transistor performance. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82918
ISSN: 00189383
DOI: 10.1109/TED.2009.2021351
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

5
checked on Jul 19, 2018

WEB OF SCIENCETM
Citations

2
checked on Jun 25, 2018

Page view(s)

10
checked on Jun 29, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.