Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030539
Title: Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
Authors: Chen, J.-D. 
Yang, J.-J.
Wise, R.
Steinmann, P.
Yu, M.-B.
Zhu, C. 
Yeo, Y.-C. 
Keywords: Canceling effect
Capacitor
Metal-insulator-metal (MIM)
SiO2
Sm2O3
Issue Date: 2009
Citation: Chen, J.-D., Yang, J.-J., Wise, R., Steinmann, P., Yu, M.-B., Zhu, C., Yeo, Y.-C. (2009). Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications. IEEE Transactions on Electron Devices 56 (11) : 2683-2691. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030539
Abstract: We report the first demonstration of metal-insulator-metal (MIM) capacitors with Sm2O3/SiO2 laminated dielectrics featuring low quadratic voltage coefficient of capacitance (VCC) and high capacitance density for precision analog circuit applications. In comparison with a HfO2 MIM dielectric, the Sm2O3 MIM dielectric is found to show a smaller quadratic VCC and a similar dielectric constant. We also investigated the cancellation of the positive quadratic VCC of Sm2 O3 through its combination with a SiO2 layer having a negative quadratic VCC. Thus, MIM capacitors with a Sm2O3/SiO2 laminated dielectric were fabricated with various Sm2O3 and SiO2 thickness combinations. Capacitors with the Sm2O3/ SiO2 laminated dielectric exhibit tunable quadratic VCC and high capacitance density. Very low quadratic VCC at various capacitance densities were achieved. The leakage current mechanism is related to Poole-Frenkel emission at a high positive bias. A smaller quadratic VCC is obtained at higher frequencies. We also conducted an extensive physical characterization of Sm2O3 using transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82905
ISSN: 00189383
DOI: 10.1109/TED.2009.2030539
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