Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2010.03.106
Title: Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition
Authors: Tian, F.
Chor, E.F. 
Keywords: AlGaN/GaN
Hafnium oxide (HfO2)
Heterostructure field effect transistors (HFETs)
Pulsed laser deposition (PLD)
Issue Date: 1-Oct-2010
Citation: Tian, F., Chor, E.F. (2010-10-01). Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition. Thin Solid Films 518 (24 SUPPL.) : e121-e124. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.106
Abstract: Physical and electrical characteristics of hafnium oxide (HfO2) films grown by pulsed laser deposition (PLD) technique and their application in AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) have been investigated. The PLD-grown amorphous HfO2 films exhibit good constituent uniformity and stoichiometry. The conduction band offset for HfO2/GaN heterostructure is evaluated to be 1.7 eV. The dielectric constant of HfO2 is estimated as ∼ 20 and the effective oxide charge density is ∼ 8.9 × 1011 cm - 2. The fabricated PLD-grown HfO2 MIS-HFETs show a much better electrical performance than the conventional Schottky gate-HFETs, including a larger maximum drain current (31.5%), larger gate voltage swing (8.5%), smaller gate leakage current (two orders of magnitude), and smaller degradation rate at an elevated temperature operation. © 2010 Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/82902
ISSN: 00406090
DOI: 10.1016/j.tsf.2010.03.106
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