Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.3584823

Title:	Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction
Authors:	Fang, L.W.-W. Zhao, R. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C.
Issue Date:	May-2011
Citation:	Fang, L.W.-W., Zhao, R., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C. (2011-05). Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3584823
Abstract:	A phase change memory device integrated with a nickel monosilicide (NiSi) bottom electrode and a dielectric (Ta2 O5) interlayer was investigated. The presence of a low thermal conductivity thin film between the bottom electrode and phase change layer promotes heating efficiency in the device. Reset voltages down to 2.2 and 1.86 V could be achieved for memory device without and with the Ta2 O5 interlayer, respectively. In addition, low reset current of 0.66 mA and SET current of 0.2 mA were obtained for devices with Ta2 O5 interlayer having a contact dimension of ∼1 μm. Endurance of the devices was also studied. © 2011 American Vacuum Society.
Source Title:	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI:	http://scholarbank.nus.edu.sg/handle/10635/82885
ISSN:	10711023
DOI:	10.1116/1.3584823
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check