Please use this identifier to cite or link to this item:
|Title:||Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines|
|Citation:||Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chi, D.Z., Dai, J.Y., Chan, L. (2002-06). Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines. Journal of the Electrochemical Society 149 (6) : G331-G335. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1473192|
|Abstract:||The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have been analyzed. The nucleation of NiSi2 was hindered on the narrow poly-Si lines as compared to that on the large area poly-Si pads at 750°C. Stress is believed to play an important role in the delayed nucleation of NiSi2. In addition, layer inversion was found to be less severe on the narrow poly-Si lines as compared to that on the poly-Si pads after being subjected to the same annealing condition. This is likely due to the limiting grain growth of the poly-Si in the narrow lines. Enhanced stability of Ni(Pt)Si was achieved up to 800°C on both poly-Si wide pads and narrow lines.|
|Source Title:||Journal of the Electrochemical Society|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 22, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Dec 7, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.