Please use this identifier to cite or link to this item:
|Title:||Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions|
|Keywords:||Lateral tensile strain|
|Citation:||Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-11). Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions. IEEE Transactions on Electron Devices 54 (11) : 2910-2917. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.906941|
|Abstract:||We report the demonstration of a novel strained silicon-on-insulator N-MOSFET featuring silicon-carbon (Si1-yCy) source and drain (S/D) regions, tantalum nitride metal gate, and hafnium-aluminum oxide high-κ gate dielectric. Due to the lattice mismatch between Si0.99C0.01 S/D stressors and Si, a lateral tensile strain is induced in the transistor channel, leading to substantial electron mobility enhancement. At a fixed off-state leakage of 100 nA / μm, the Si1-yCyS/D N-MOSFET having a width of 4.7 μm achieves a drive current IDsat enhancement of 16% over a control N-MOSFET. This IDsat enhancement, which is primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate length LG due to an increased strain level in the transistor channel as the Si1-yCyS/D stressors are placed in closer proximity. Slightly improved series resistance with Si1-yCy S/D regions in a strained N-MOSFET accounted for approximately 2% IDsat gain. In addition, a reduction of device width is found to reduce the drive current enhancement of the N-MOSFETs due to the presence of a transverse compressive strain in the transistor channel induced by the isolation regions. © 2007 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Nov 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.