Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2010723
Title: Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
Authors: Tan, K.-M.
Yang, M.
Fang, W.-W.
Lim, A.E.-J.
Lee, R.T.-P. 
Liow, T.-Y.
Yeo, Y.-C. 
Keywords: Diamond
Dielectric films
MOS devices
MOSFETs
Strain
Stress
Issue Date: 2009
Citation: Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C. (2009). Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain. IEEE Electron Device Letters 30 (3) : 250-253. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2010723
Abstract: We report the first investigation of the impact of diamond-like carbon (DLC) high-stress liner on strained p-channel metal-oxide-semiconductor field-effect transistors (p-FETs) having silicon-germanium (SiGe) source-and-drain (S/D) stressor. The DLC exhibited a very high compressive stress of ∼5 GPa. At a fixed Ioff of 1 × 10-7 A/μ, the DLC liner stressor contributed to a further 11% Ion enhancement for p-FETs with Si0.75 Ge0.25 S/D. This is the first demonstration that further boost in device performance in a p-FET that is already strained using Si0.75Ge0.25 S/D can be achieved with DLC liner stressor. Due to the extremely high intrinsic compressive stress of the DLC, a very small DLC thickness of ∼27 nm is sufficient for achieving significant strain effect and performance enhancement. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82871
ISSN: 07413106
DOI: 10.1109/LED.2008.2010723
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