Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4760279

Title:	Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions
Authors:	Sahadevan, A.M. Gopinadhan, K. Bhatia, C.S. Yang, H.
Issue Date:	15-Oct-2012
Citation:	Sahadevan, A.M., Gopinadhan, K., Bhatia, C.S., Yang, H. (2012-10-15). Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions. Applied Physics Letters 101 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4760279
Abstract:	The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (C l) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance (TMR) values suggests higher C l for low TMR junctions. Using Cole-Cole plots, the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values. © 2012 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82863
ISSN:	00036951
DOI:	10.1063/1.4760279
Appears in Collections:	Staff Publications

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