Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3428666
Title: Palladium-induced crystallization of germanium with varied palladium thicknesses
Authors: Phung, T.H.
Zhu, C. 
Issue Date: 2010
Source: Phung, T.H., Zhu, C. (2010). Palladium-induced crystallization of germanium with varied palladium thicknesses. Journal of the Electrochemical Society 157 (7) : H755-H758. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3428666
Abstract: Palladium-induced crystallization of germanium at 350°C using different Pd thicknesses is carried out and the qualities of the poly-Ge films obtained are characterized. The crystal qualities of the Ge films are highly dependent on the thickness of Pd used, in which 55 Å is the optimal thickness to induce crystallization of a 418 nm thick Ge film. When a Pd layer thicker than 55 Å is used, it not only deteriorates the crystal quality of Ge but also increases the concentrations of PdGe and Pd2 Ge in the Ge layer. The sheet resistance of the poly-Ge film decreases with increasing crystalline fraction when the Pd layer is thinner than 70 Å because the amount of Pd germanides is low, and the opposite trend is observed when the Pd layer is thicker than 70 Å due to the high concentration of Pd germanides in the film. The complex dielectric constants 〈 ε2 〉 of the poly-Ge films show not only the transition energy E1 and E 1 + Δ1 peaks but also two other peaks at photon energies of 1.6 and 1.8 eV, which possibly are due to the presence of Pd germanides in the Ge layer. © 2010 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/82860
ISSN: 00134651
DOI: 10.1149/1.3428666
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