P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3097029

Title:	P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires
Authors:	Liao, L. Yan, B. Hao, Y.F. Xing, G.Z. Liu, J.P. Zhao, B.C. Shen, Z.X. Wu, T. Wang, L. Thong, J.T.L. Li, C.M. Huang, W. Yu, T.
Issue Date:	2009
Citation:	Liao, L., Yan, B., Hao, Y.F., Xing, G.Z., Liu, J.P., Zhao, B.C., Shen, Z.X., Wu, T., Wang, L., Thong, J.T.L., Li, C.M., Huang, W., Yu, T. (2009). P -type electrical, photoconductive, and anomalous ferromagnetic properties of Cu2 O nanowires. Applied Physics Letters 94 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3097029
Abstract:	Cu2 O nanowires are synthesized by reduction of CuO nanowires with hydrogen gas. Strong green photoluminescence dominated by band-edge emission is observed. Field effect transistors fabricated from individual Cu2 O nanowires present high on-off ratio (> 106) and high mobility (>95 cm2 /V s). Furthermore, the device demonstrates a fast photoelectric response to blue illumination in air at room temperature. In addition, anomalous ferromagnetism appears in Cu2 O nanowires, which may originate from the defects in Cu2 O nanowires. This work shows the application potentials of the Cu2 O nanowires, especially in an electrical and photonic device. © 2009 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82859
ISSN:	00036951
DOI:	10.1063/1.3097029
Appears in Collections:	Staff Publications

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