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|Title:||Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance|
|Authors:||Chen, J.H. |
|Citation:||Chen, J.H., Wang, Y.Q., Yoo, W.J., Yeo, Y.-C., Samudra, G., Chan, D.S.H., Du, A.Y., Kwong, D.-L. (2004-11). Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance. IEEE Transactions on Electron Devices 51 (11) : 1840-1848. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.837011|
|Abstract:||We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-κ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO2 + Hf → HfO2+Ge and 3GeO2 + 4Al → 2Al2O3+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO 2, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10 6 rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices. © 2004 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
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