Please use this identifier to cite or link to this item:
|Title:||Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance|
|Authors:||Chen, J.H. |
|Citation:||Chen, J.H., Wang, Y.Q., Yoo, W.J., Yeo, Y.-C., Samudra, G., Chan, D.S.H., Du, A.Y., Kwong, D.-L. (2004-11). Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance. IEEE Transactions on Electron Devices 51 (11) : 1840-1848. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2004.837011|
|Abstract:||We fabricated a nonvolatile Flash memory device using Ge nanocrystals (NCs) floating-gate (FG)-embedded in HfAlO high-κ tunneling/control oxides. Process compatibility and memory operation of the device were investigated. Results show that Ge-NC have good thermal stability in the HfAlO matrix as indicated by the negative Gibbs free energy changes for both reactions of GeO2 + Hf → HfO2+Ge and 3GeO2 + 4Al → 2Al2O3+3Ge. This stability implies that the fabricated structure can be compatible with the standard CMOS process with the ability to sustain source-drain activation anneal temperatures. Compared with Si-NC embedded in HfO 2, Ge-NC embedded in HfAlO can provide more electron traps, thereby enlarging the memory window. It is also shown that this structure can achieve a low programming voltage of 6-7 V for fast programming, a long charge retention time of ten years maintaining a 0.7-V memory window, and good endurance characteristics of up to 10 6 rewrite cycles. This paper shows that the Ge-NC embedded in HfAlO is a promising candidate for further scaling of FG Flash memory devices. © 2004 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 11, 2018
WEB OF SCIENCETM
checked on Jul 3, 2018
checked on May 4, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.