Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1555708
Title: Nitride-mediated epitaxy of CoSi2 on Si(001)
Authors: Chong, R.K.K.
Yeadon, M. 
Choi, W.K. 
Stach, E.A.
Boothroyd, C.B.
Issue Date: 24-Mar-2003
Source: Chong, R.K.K., Yeadon, M., Choi, W.K., Stach, E.A., Boothroyd, C.B. (2003-03-24). Nitride-mediated epitaxy of CoSi2 on Si(001). Applied Physics Letters 82 (12) : 1833-1835. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555708
Abstract: A study was performed on nitride-mediated epitaxy of CoSi2 on Si (001). An ultrathin layer of silicon nitride was formed by exposure to ammonia gas at 900 °C, followed by the deposition of a layer of Co at room temperature. It was found that CoSi2 islands were elongated along the in-plane Si(110) directions, consistent with reports of the deposition of Co by molecular beam epitaxy on clean Si(100) at elevated temperature and low deposition rates.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82765
ISSN: 00036951
DOI: 10.1063/1.1555708
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