Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2010532
Title: Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors
Authors: Jiang, Y.
Liow, T.Y.
Singh, N.
Tan, L.H.
Lo, G.Q.
Chan, D.S.H. 
Kwong, D.L.
Keywords: Gate-all-around (GAA) silicon nanowire (SiNW)
Metallic nanowire (NW) contacts
Sheet resistance
Ultrathin silicide film
Issue Date: 2009
Citation: Jiang, Y., Liow, T.Y., Singh, N., Tan, L.H., Lo, G.Q., Chan, D.S.H., Kwong, D.L. (2009). Nickel salicided source/drain extensions for performance improvement in ultrascaled (Sub 10 nm) Si-nanowire transistors. IEEE Electron Device Letters 30 (2) : 195-197. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2010532
Abstract: This letter demonstrates successful integration of Gate-All-Around (GAA) nanowire (NW) transistors with low-resistivity metallic NW point contacts at source/drain extensions. Ultrascaled GAA silicon NW transistors with gate lengths down to 8 nm have been achieved, exhibiting good performance among the NW FETs reported to date. Compared to the reference devices, the metallic contact NW devices show 580% enhancement in ION from 103 to 705 μA, at a fixed IOFF of 10 nA/μm. Nickel silicide resistivity for ultrathin films is also investigated in this letter for the integration of salicided source/drain extensions with the GAA NW process. Experimental results show that 4 nm of deposited Ni is suitable for forming NW contacts with 10-nm diameters, which is thin enough to avoid oversilicidation while meeting the low-resistivity requirements. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82760
ISSN: 07413106
DOI: 10.1109/LED.2009.2010532
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

14
checked on Dec 13, 2018

WEB OF SCIENCETM
Citations

13
checked on Dec 13, 2018

Page view(s)

22
checked on Dec 15, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.