Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2005648
Title: N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
Authors: Koh, S.-M.
Sekar, K.
Lee, D.
Krull, W.
Wang, X.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Laser anneal
Molecular carbon
Silicon carbon
Solid phase epitaxy (SPE)
Strain
Issue Date: 2008
Citation: Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C. (2008). N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy. IEEE Electron Device Letters 29 (12) : 1315-1318. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2005648
Abstract: In this letter, we report the use of a novel cluster-carbon C7 H7 +) implant and pulsed-excimer-laser-induced solid-phase-epitaxy technique to form embedded silicon-carbon (Si:C) source/drain (S/D) stressors. A substitutional carbon concentration Csub of ∼1.1% was obtained in this letter. N-channel MOSFETs (n-FETs) integrated with embedded silicon-carbon (Si:C) S/D stressors formed using the novel cluster-carbon implant and pulsed-laser-anneal technique demonstrate improvement in current drive of 14% over control n-FETs formed with Si preamorphization implant. IOFF-IDSAT comparison shows a 15% IDSAT enhancement for n-FETs with embedded Si:C S/D at an IOFF = 1 nA μm despite a slightly higher series resistance. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82749
ISSN: 07413106
DOI: 10.1109/LED.2008.2005648
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