Please use this identifier to cite or link to this item:
https://doi.org/10.1143/APEX.5.116502
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dc.title | N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates | |
dc.contributor.author | Ivana | |
dc.contributor.author | Subramanian, S. | |
dc.contributor.author | Owen, M.H.S. | |
dc.contributor.author | Tan, K.H. | |
dc.contributor.author | Loke, W.K. | |
dc.contributor.author | Wicaksono, S. | |
dc.contributor.author | Yoon, S.F. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:33:02Z | |
dc.date.available | 2014-10-07T04:33:02Z | |
dc.date.issued | 2012-11 | |
dc.identifier.citation | Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2012-11). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. Applied Physics Express 5 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.116502 | |
dc.identifier.issn | 18820778 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82748 | |
dc.description.abstract | InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni-InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm · tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In 0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique. © 2012 The Japan Society of Applied Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/APEX.5.116502 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1143/APEX.5.116502 | |
dc.description.sourcetitle | Applied Physics Express | |
dc.description.volume | 5 | |
dc.description.issue | 11 | |
dc.description.page | - | |
dc.identifier.isiut | 000310867800032 | |
Appears in Collections: | Staff Publications |
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