Please use this identifier to cite or link to this item: https://doi.org/10.1143/APEX.5.116502
Title: N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates
Authors: Ivana
Subramanian, S.
Owen, M.H.S.
Tan, K.H.
Loke, W.K.
Wicaksono, S.
Yoon, S.F.
Yeo, Y.-C. 
Issue Date: Nov-2012
Citation: Ivana, Subramanian, S., Owen, M.H.S., Tan, K.H., Loke, W.K., Wicaksono, S., Yoon, S.F., Yeo, Y.-C. (2012-11). N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates. Applied Physics Express 5 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.116502
Abstract: InGaAs n-channel metal oxide semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GeOI) substrate for the first time. Integration of InGaAs on a GeOI substrate was achieved using a molecular beam epitaxy (MBE)-grown InAlAs graded buffer. The fabricated MOSFET, with a self-aligned Ni-InGaAs metallic source/drain, achieves good device characteristics. The normalized transconductance (Gm · tox) compares very well with reported data for InGaAs n-MOSFETs formed on bulk InP substrates, and is significantly higher than reported data for In 0.53Ga0.47As n-MOSFETs fabricated on Si substrates using a similar growth technique. © 2012 The Japan Society of Applied Physics.
Source Title: Applied Physics Express
URI: http://scholarbank.nus.edu.sg/handle/10635/82748
ISSN: 18820778
DOI: 10.1143/APEX.5.116502
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