Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.908495
Title: N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
Authors: Liow, T.-Y.
Tan, K.-M.
Lee, R.T.P. 
Tung, C.-H.
Samudra, G.S. 
Balasubramanian, N.
Yeo, Y.-C. 
Keywords: Etch-stop layer (ESL)
Fin-shaped field-effect transistor (FinFET)
Multiple-gate transistor
Silicon-carbon (SiC)
Strain
Stress
Issue Date: Nov-2007
Citation: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2007-11). N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer. IEEE Electron Device Letters 28 (11) : 1014-1017. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.908495
Abstract: The performance of n-channel (110)-sidewall trigate fin-shaped field-effect transistors (FinFETs) is seriously compromised as (110) surfaces have significantly lower electron mobility than (100) surfaces. Straining the channel in (110)-sidewall FinFETs using lattice-mismatched silicon-carbon (Si1-yCy) stressors alone was experimentally determined to be far less effective than doing the same with (100)-sidewall FinFETs. By additionally incorporating a tensile silicon nitride contact etch-stop layer, the increase in longitudinal tensile stress and the introduction of vertical compressive stress result in significant further IDsat enhancement, highlighting the importance of the vertical compressive stress component for enhancing (110)-sidewall FinFET performance. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82746
ISSN: 07413106
DOI: 10.1109/LED.2007.908495
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