Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2024332
Title: NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress
Authors: Liu, B.
Tan, K.-M.
Yang, M.
Yeo, Y.-C. 
Keywords: Diamond-like carbon (DLC)
Reliability
Strain
Transistor
Issue Date: 2009
Citation: Liu, B., Tan, K.-M., Yang, M., Yeo, Y.-C. (2009). NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress. IEEE Electron Device Letters 30 (8) : 867-869. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2024332
Abstract: Negative bias temperature instability (NBTI) characteristics of p-channel field-effect transistors (p-FETs) with diamond-like carbon (DLC) liner stressor having ultrahigh compressive stress ∼5 GPa) are investigated for the first time. Ultrafast measurement was employed for NBTI study. Power law slopes ranging from ∼0.058 to ∼0.072 are reported here. P-FETs with higher channel strain show greater threshold voltage shift Δ Vth) and transconductance degradation than those with lower or no channel strain under the same NBT stress condition Vstress. Strained p-FETs with Si S/D and DLC stressors are projected to have an NBTI lifetime of ten years at VG = -0.99 V using Eox power law lifetime extrapolation model or at VG = -0.76 using the exponential Vstress model. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82745
ISSN: 07413106
DOI: 10.1109/LED.2009.2024332
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