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https://doi.org/10.1016/S0038-1101(01)00238-6
DC Field | Value | |
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dc.title | N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD | |
dc.contributor.author | Tan, C.S. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Bera, L.K. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Antoniadis, D.A. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.contributor.author | Currie, M.T. | |
dc.contributor.author | Maiti, C.K. | |
dc.date.accessioned | 2014-10-07T04:32:55Z | |
dc.date.available | 2014-10-07T04:32:55Z | |
dc.date.issued | 2001-11 | |
dc.identifier.citation | Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K. (2001-11). N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD. Solid-State Electronics 45 (11) : 1945-1949. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(01)00238-6 | |
dc.identifier.issn | 00381101 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82738 | |
dc.description.abstract | Oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD method using a rapid thermal processing technique in N2O ambient is investigated. The electrical properties of the grown oxide have been characterized using a MOS structure. Hole confinement in the SiGe layer at low field is observed from the capacitance-voltage curve and this suggests that the strain in the initially strained Si epilayer is retained after oxidation. The experimental results are compared with simulation results obtained from a 1D Poisson solver. Dit and Qf/q values are estimated to be 3 × 1011 cm-2eV-1 and -1.2 × 1011 cm-2, respectively. These high values of Dit and negative Qf/q could possibly be due to Ge out diffusion and pile up at the SiO2/strained-Si interface. The oxide exhibits an excellent breakdown field of 15 MVcm-1. © 2001 Elsevier Science Ltd. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0038-1101(01)00238-6 | |
dc.source | Scopus | |
dc.subject | N2O oxidation | |
dc.subject | Strained-Si/relaxed-SiGe heterostructure | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/S0038-1101(01)00238-6 | |
dc.description.sourcetitle | Solid-State Electronics | |
dc.description.volume | 45 | |
dc.description.issue | 11 | |
dc.description.page | 1945-1949 | |
dc.description.coden | SSELA | |
dc.identifier.isiut | 000172273900015 | |
Appears in Collections: | Staff Publications |
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