Please use this identifier to cite or link to this item:
|Title:||Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer|
|Citation:||Gyanathan, A., Yeo, Y.-C. (2011-12-15). Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer. Journal of Applied Physics 110 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3672448|
|Abstract:||This work investigates multi-level phase change random access memory (PCRAM) devices comprising two Ge 2Sb 2Te 5 (GST) layers sandwiching a thermal insulating Ta 2O 5 barrier layer. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogen doped GST (NGST) layer on a thin Ta 2O 5 barrier layer on an undoped GST layer. It is demonstrated that one of the phase change layers in the GST stack can be selectively amorphized by using a voltage pulse. This enables multi-level resistance switching. The differences in resistivities, as well as the different melting and crystallization temperatures of both the NGST and GST layers, contribute to the multi-level switching dynamics of the PCRAM device. The thermal conductivity of Ta 2O 5 with respect to GST is also another factor influencing the multi-level switching. Extensive electrical characterization of the PCRAM devices was performed. Thermal analysis was used to examine the physics behind the multi-level switching mechanism of these devices. © 2011 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 4, 2018
WEB OF SCIENCETM
checked on Nov 19, 2018
checked on Dec 7, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.