Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3672448
Title: Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
Authors: Gyanathan, A.
Yeo, Y.-C. 
Issue Date: 15-Dec-2011
Citation: Gyanathan, A., Yeo, Y.-C. (2011-12-15). Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer. Journal of Applied Physics 110 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3672448
Abstract: This work investigates multi-level phase change random access memory (PCRAM) devices comprising two Ge 2Sb 2Te 5 (GST) layers sandwiching a thermal insulating Ta 2O 5 barrier layer. The PCRAM cell comprises a phase change material stack between a top and a bottom electrode. The phase change material stack comprises a nitrogen doped GST (NGST) layer on a thin Ta 2O 5 barrier layer on an undoped GST layer. It is demonstrated that one of the phase change layers in the GST stack can be selectively amorphized by using a voltage pulse. This enables multi-level resistance switching. The differences in resistivities, as well as the different melting and crystallization temperatures of both the NGST and GST layers, contribute to the multi-level switching dynamics of the PCRAM device. The thermal conductivity of Ta 2O 5 with respect to GST is also another factor influencing the multi-level switching. Extensive electrical characterization of the PCRAM devices was performed. Thermal analysis was used to examine the physics behind the multi-level switching mechanism of these devices. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82729
ISSN: 00218979
DOI: 10.1063/1.3672448
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