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https://scholarbank.nus.edu.sg/handle/10635/82722
| Title: | MOS characteristics of substituted Al gate on high-κ dielectric | Authors: | Park, C.S. Cho, B.J. Kwong, D.-L. |
Issue Date: | Nov-2004 | Citation: | Park, C.S., Cho, B.J., Kwong, D.-L. (2004-11). MOS characteristics of substituted Al gate on high-κ dielectric. IEEE Electron Device Letters 25 (11) : 725-727. ScholarBank@NUS Repository. | Abstract: | Substituted aluminum (SA) metal gate on high-κ gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450 °C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate. © 2004 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82722 | ISSN: | 07413106 |
| Appears in Collections: | Staff Publications |
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