Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1509844
Title: Morphological and structural analyses of plasma-induced damage to n-type GaN
Authors: Choi, H.W.
Chua, S.J. 
Tripathy, S. 
Issue Date: 15-Oct-2002
Citation: Choi, H.W., Chua, S.J., Tripathy, S. (2002-10-15). Morphological and structural analyses of plasma-induced damage to n-type GaN. Journal of Applied Physics 92 (8) : 4381-4385. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1509844
Abstract: Plasma-induced damage to n-type GaN has been studied by atomic force microscopy and Raman spectroscopy. It was found that the extent of surface roughening is largely dependent on the surface defect density, since preferential sputtering at these sites takes place. Several Raman defect modes have emerged from the plasma-damaged samples, and have been compared to the defect modes observed from ion-implanted GaN. The defect peaks centered at 300 and 360cm -1 have been assigned to disorder-activated Raman scattering modes, while the 453 and 639cm -1 peaks have been attributed to vacancy scattering. It has also been demonstrated that structural damage can be annealed out at 900 °C for 60 s in flowing N 2. © 2002 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82721
ISSN: 00218979
DOI: 10.1063/1.1509844
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

12
checked on Jul 17, 2018

WEB OF SCIENCETM
Citations

12
checked on Jul 9, 2018

Page view(s)

19
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.