Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000997
Title: Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface
Authors: Lim, A.E.-J.
Lee, R.T.P. 
Samudra, G.S. 
Kwong, D.-L.
Yeo, Y.-C. 
Keywords: Al
Interface dipole
La
Metal gate
Mo
Work function modification
Issue Date: Aug-2008
Citation: Lim, A.E.-J., Lee, R.T.P., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2008-08). Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interface. IEEE Electron Device Letters 29 (8) : 848-851. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000997
Abstract: This letter demonstrates a way for modifying the effective work function Φm of a molybdenum (Mo) gate electrode by interface dipole engineering in a metal gate/high-κ gate stack. N-type Mo gate Φm (∼4.2 eV) was achieved on a HfLaO gate dielectric even after 950-°C rapid thermal annealing (RTA) due to the presence of a La-induced interface dipole layer. By alloying with ∼14%-19% of aluminum (Al), the effective Mo gate Φm on HfLaO significantly increased by ∼0.6 eV after 950-°C RTA. The incorporation of Al into the HfLaO gate dielectric was evident after the high-temperature anneal. The Φm modulation was attributed to Al-induced interface dipole formation, of which has opposite polarity to the La-induced dipole, at the high-κ/SiO2 interface. This novel concept of employing two opposing interface dipoles in the same metal gate/high-κ stack for Φm tunability would provide insights for future gate stack interface engineering. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82717
ISSN: 07413106
DOI: 10.1109/LED.2008.2000997
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Sep 20, 2018

WEB OF SCIENCETM
Citations

8
checked on Sep 4, 2018

Page view(s)

23
checked on Sep 21, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.