Please use this identifier to cite or link to this item: https://doi.org/10.1049/ip-map:20030854
Title: Modelling on-chip circular double-spiral stacked inductors for RFICs
Authors: Yin, W.Y. 
Pan, S.J.
Matsumura, E.
Li, L.W. 
Gan, Y.B. 
Issue Date: Dec-2003
Citation: Yin, W.Y., Pan, S.J., Matsumura, E., Li, L.W., Gan, Y.B. (2003-12). Modelling on-chip circular double-spiral stacked inductors for RFICs. IEE Proceedings: Microwaves, Antennas and Propagation 150 (6) : 463-469. ScholarBank@NUS Repository. https://doi.org/10.1049/ip-map:20030854
Abstract: Extensive experimental results and detailed investigations of the performance of on-chip circular double-spiral stacked inductors on silicon substrates are presented. Based on a proposed equivalent circuit model and measured S-parameters using the de-embedding technique, the inductance L, resonant frequency fres, Q-factor, coupling capacitance between the upper and lower spirals, and oxide capacitance of these inductors are extracted and compared with the single-spiral case. Some locally scalable formulas, including single-spiral geometries, are obtained to predict inductor performance. Methods to improve the L and Q-factor are explored for double-spiral stacked inductors with single via connection.
Source Title: IEE Proceedings: Microwaves, Antennas and Propagation
URI: http://scholarbank.nus.edu.sg/handle/10635/82714
ISSN: 13502417
DOI: 10.1049/ip-map:20030854
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