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|Title:||Microstructural characterization of rf sputtered polycrystalline silicon germanium films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K., Teh, L.K., Bera, L.K., Chim, W.K., Wee, A.T.S., Jie, Y.X. (2002-01-01). Microstructural characterization of rf sputtered polycrystalline silicon germanium films. Journal of Applied Physics 91 (1) : 444-450. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1423388|
|Abstract:||Polycrystalline silicon germanium (Si1-xGex) films deposited by the rf sputtering technique were characterized using a combination of transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman spectroscopy techniques. The TEM results showed small grains (10-20 nm) with microtwins, and AFM showed islands of 100-200 nm in the films. The XRD results show that our films consist of Si1-xGex alloy with no cluster of Ge or a Ge-rich material embedded in a Si matrix. The smaller grains in our films could be a result of an abundance of nucleating sites or impurities in the films. Raman spectroscopy results indicate that our films were strain free. © 2002 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
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