Please use this identifier to cite or link to this item:
|Title:||Microstructural characterization of rf sputtered polycrystalline silicon germanium films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K., Teh, L.K., Bera, L.K., Chim, W.K., Wee, A.T.S., Jie, Y.X. (2002-01-01). Microstructural characterization of rf sputtered polycrystalline silicon germanium films. Journal of Applied Physics 91 (1) : 444-450. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1423388|
|Abstract:||Polycrystalline silicon germanium (Si1-xGex) films deposited by the rf sputtering technique were characterized using a combination of transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman spectroscopy techniques. The TEM results showed small grains (10-20 nm) with microtwins, and AFM showed islands of 100-200 nm in the films. The XRD results show that our films consist of Si1-xGex alloy with no cluster of Ge or a Ge-rich material embedded in a Si matrix. The smaller grains in our films could be a result of an abundance of nucleating sites or impurities in the films. Raman spectroscopy results indicate that our films were strain free. © 2002 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on May 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.