Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1502921
Title: Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
Authors: Tripathy, S. 
Chua, S.J. 
Chen, P.
Miao, Z.L.
Issue Date: 1-Oct-2002
Citation: Tripathy, S., Chua, S.J., Chen, P., Miao, Z.L. (2002-10-01). Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111). Journal of Applied Physics 92 (7) : 3503-3510. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1502921
Abstract: Using micro-Raman spectroscopy, we have studied the vibrational properties of GaN and Al 0.5Ga 0.5N/GaN long period superlattices (SLs) grown on Si(111). Crack-free areas of GaN layers grown on Si(111) exhibit residual tensile stress, which is evidenced by the red shift of the frequency of E 2(TO) phonon. We have derived the strain cartography in GaN and Al 0.5Ga 0.5N/GaN long period SLs, which shows that cracking leads to strain relaxation. In addition, the AlGaN layers on GaN introduce an additional component of compressive strain into the GaN layers in these SLs. The amount of strain is quantified using micro-Raman analyses and by taking into account the elastic properties of GaN and AlGaN. By introducing a thin, low temperature InGaN interlayer, we could significantly reduce the crack density of the GaN layer. © 2002 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82697
ISSN: 00218979
DOI: 10.1063/1.1502921
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