Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2006.10.679
Title: Magnetoresistance modulation due to interfacial conductance of current perpendicular-to-plane spin valves
Authors: Leong, Z.Y.
Tan, S.G.
Jalil, M.B.A. 
Kumar, S.B. 
Han, G.C.
Keywords: Giant magnetoresistance
Interface effects
Spin relaxation
Spin-drift diffusion
Issue Date: Mar-2007
Citation: Leong, Z.Y., Tan, S.G., Jalil, M.B.A., Kumar, S.B., Han, G.C. (2007-03). Magnetoresistance modulation due to interfacial conductance of current perpendicular-to-plane spin valves. Journal of Magnetism and Magnetic Materials 310 (2 SUPPL. PART 3) : e635-e637. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2006.10.679
Abstract: We study the effects of the interfacial conductivity σi and spin asymmetry γ at the boundaries between the ferromagnetic (FM) and nonmagnetic layers of a current perpendicular-to-plane spin-valve trilayer, based on the semi-classical drift-diffusion model. We found that the expected increase in the MR ratio with decreasing σi occurs only for moderately low σi and γ larger than some critical value γc. For γ < γc, the competitive contribution to spin-dependent scattering in the FM layers leads to a reduction in MR with decreasing σi. For even lower σi values, our calculations predict a stronger suppression of MR, which applies even when γ exceeds γc. We attribute this MR suppression to the spin relaxation within the FM layers, since the effect disappears in the limit of infinite spin-relaxation length. Thus, for highly spin-asymmetric interfacial resistances (with γ > γc), there is an optimal conductivity σi which yields the maximum MR ratio. © 2006 Elsevier B.V. All rights reserved.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/82661
ISSN: 03048853
DOI: 10.1016/j.jmmm.2006.10.679
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