Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.851238
Title: Low noise RF MOSFETs on flexible plastic substrates
Authors: Kao, H.L.
Chin, A. 
Hung, B.F.
Lee, C.F.
Lai, J.M.
McAlister, S.P.
Samudra, G.S. 
Yoo, W.J. 
Chi, C.C.
Keywords: Associated gain
MOSFET
Plastic
RF noise
Issue Date: Jul-2005
Citation: Kao, H.L., Chin, A., Hung, B.F., Lee, C.F., Lai, J.M., McAlister, S.P., Samudra, G.S., Yoo, W.J., Chi, C.C. (2005-07). Low noise RF MOSFETs on flexible plastic substrates. IEEE Electron Device Letters 26 (7) : 489-491. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.851238
Abstract: We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (Lg = 80 nm) devices. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82626
ISSN: 07413106
DOI: 10.1109/LED.2005.851238
Appears in Collections:Staff Publications

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