Layer inversion of Ni(Pt)Si on mixed phase Si films

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1447442

Title:	Layer inversion of Ni(Pt)Si on mixed phase Si films
Authors:	Lee, P.S. Pey, K.L. Mangelinck, D. Ding, J. Osipowicz, T. See, A.
Issue Date:	Mar-2002
Citation:	Lee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Osipowicz, T., See, A. (2002-03). Layer inversion of Ni(Pt)Si on mixed phase Si films. Electrochemical and Solid-State Letters 5 (3) : G15-G17. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1447442
Abstract:	The formation of Ni silicides has been improved with Ni(Pt)-silicidation on the mixed phase Si films which were grown using the rapid thermal chemical vapor deposition technique. The Ni(Pt)Si was stabilized up to 800°C and layer inversion was retarded beyond 600°C. The enhanced stability of Ni(Pt)Si is attributed to the change in Gibbs free energy. The reduced layer inversion is due to the modification of the Si microstructure that has played an important role in the layer inversion. The enlarged poly-Si grains from the mixed phase films are due to the silicide enhanced mediated crystallization using NiSi2 precipitates as seeds besides the preexisting Si crystallites.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82615
ISSN:	10990062
DOI:	10.1149/1.1447442
Appears in Collections:	Staff Publications

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