Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2024649
Title: Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs
Authors: Chin, H.-C.
Gong, X.
Liu, X.
Yeo, Y.-C. 
Keywords: High mobility
InGaAs
MOSFET
Strain
Issue Date: 2009
Citation: Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C. (2009). Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs. IEEE Electron Device Letters 30 (8) : 805-807. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2024649
Abstract: We report the first demonstration of a strained In0.53 Ga0.47As channel n-MOSFET featuring in situ doped In0.4Ga0.6As (S/D) regions. The in situ silicondoped In0.4Ga0.6As S/D was formed by a recess etch and a selective epitaxy of In0.4Ga0.6 As in the S/D by metal-organic chemical vapor deposition. A lattice mismatch of ∼0.9% between In0.53Ga0.47As and In0.4Ga0.6As S/D gives rise to lateral tensile strain and vertical compressive strain in the In0.53 Ga0.47As channel region. In addition, the in situ Si-doping process increases the carrier concentration in the S/D regions for series-resistance reduction. Significant drive-current improvement over the control n-MOSFET with Si-implanted In0.53Ga0.47 As S/D regions was achieved. This is attributed to both the strain-induced band-structure modification in the channel that reduces the effective electron mass along the transport direction and the reduction in the S/D series resistance. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82614
ISSN: 07413106
DOI: 10.1109/LED.2009.2024649
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