Please use this identifier to cite or link to this item:
|Title:||Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs|
|Citation:||Chin, H.-C., Gong, X., Liu, X., Yeo, Y.-C. (2009). Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETs. IEEE Electron Device Letters 30 (8) : 805-807. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2024649|
|Abstract:||We report the first demonstration of a strained In0.53 Ga0.47As channel n-MOSFET featuring in situ doped In0.4Ga0.6As (S/D) regions. The in situ silicondoped In0.4Ga0.6As S/D was formed by a recess etch and a selective epitaxy of In0.4Ga0.6 As in the S/D by metal-organic chemical vapor deposition. A lattice mismatch of ∼0.9% between In0.53Ga0.47As and In0.4Ga0.6As S/D gives rise to lateral tensile strain and vertical compressive strain in the In0.53 Ga0.47As channel region. In addition, the in situ Si-doping process increases the carrier concentration in the S/D regions for series-resistance reduction. Significant drive-current improvement over the control n-MOSFET with Si-implanted In0.53Ga0.47 As S/D regions was achieved. This is attributed to both the strain-induced band-structure modification in the channel that reduces the effective electron mass along the transport direction and the reduction in the S/D series resistance. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 13, 2018
WEB OF SCIENCETM
checked on Nov 5, 2018
checked on Nov 2, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.