Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/82605
Title: Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition
Authors: Tan, C.F.
Chen, X.Y.
Lu, Y.F.
Wu, Y.H. 
Cho, B.J. 
Zeng, J.N. 
Keywords: Laser annealing
Laser deposition
Photoluminescence
Silicon nanocrystals
Issue Date: Feb-2004
Source: Tan, C.F.,Chen, X.Y.,Lu, Y.F.,Wu, Y.H.,Cho, B.J.,Zeng, J.N. (2004-02). Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition. Journal of Laser Applications 16 (1) : 40-45. ScholarBank@NUS Repository.
Abstract: We report the laser annealing effects on the structures and properties of silicon nanocrystal films fabricated by pulsed-laser deposition in inert argon gas. The surface morphology of the as-deposited films is greatly determined by the angle relative to the laser ablation spot. Photoluminescence (PL) peaked at 620 nm corresponding to 2.0 eV is observed in the as-deposited films. After single-pulse laser annealing, better crystallinity and increased PL intensity are obtained. The PL peak remains at 620 nm. High laser fluence causes damage to the films and the threshold fluence for laser ablation is around 100 mJ/cm2. Multiple-pulse laser annealing with increasing pulse number at fluences below the threshold of laser ablation can provide better crystallization and property improvement than single-pulse annealing. There are a certain number of pulses for the best multiple-pulse annealing effect before damage or laser ablation occur. © 2004 Laser Institute of America.
Source Title: Journal of Laser Applications
URI: http://scholarbank.nus.edu.sg/handle/10635/82605
ISSN: 1042346X
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

26
checked on Mar 9, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.