Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1667602
Title: Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy films
Authors: Feng, W.
Choi, W.K. 
Issue Date: 15-Apr-2004
Citation: Feng, W., Choi, W.K. (2004-04-15). Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy films. Journal of Applied Physics 95 (8) : 4197-4203. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1667602
Abstract: The thermal effects on electrical properties of Si0.887Ge 0.113 and Si0.887-yGe 0.113Cy films were investigated at an oxidizing or inert ambient. The reduction in C content was observed while annealing Si0.887-yGe0.113Cy films at an oxidizing ambient. The films which were annealed in an inert ambient were found to have significant amount of SiC precipitates. The measurements from capacitance versus voltage and deep level transient spectroscopy determined interface state values.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82582
ISSN: 00218979
DOI: 10.1063/1.1667602
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