Please use this identifier to cite or link to this item:
|Title:||Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy films|
|Citation:||Feng, W., Choi, W.K. (2004-04-15). Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy films. Journal of Applied Physics 95 (8) : 4197-4203. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1667602|
|Abstract:||The thermal effects on electrical properties of Si0.887Ge 0.113 and Si0.887-yGe 0.113Cy films were investigated at an oxidizing or inert ambient. The reduction in C content was observed while annealing Si0.887-yGe0.113Cy films at an oxidizing ambient. The films which were annealed in an inert ambient were found to have significant amount of SiC precipitates. The measurements from capacitance versus voltage and deep level transient spectroscopy determined interface state values.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on May 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.