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|Title:||Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealing|
|Authors:||Loh, W.Y. |
Stress-induced leakage current (SILC)
Thermal annealing and gate oxide reliability
Thin gate oxide
|Citation:||Loh, W.Y.,Cho, B.J.,Li, M.F. (2002-05). Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealing. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (5 A) : 2873-2877. ScholarBank@NUS Repository.|
|Abstract:||Quasi-breakdown (QB) in thin gate oxide (45 Å) is studied using post-QB thermal annealing and bipolar current stressing. It has been observed that there exist at least two different stages within quasi-breakdown differentiated by their electrical recoverability. Post-QB thermal annealing on oxides stressed to electrically recoverable QB stage shows significant recovery and reduction in the gate leakage current. When stressed to electrically unrecoverable QB stage however, no reduction in the gate leakage current can be observed by thermal annealing. Using low current stressing and post-QB thermal annealing, it is observed that the QB leakage current comprises of two components: an initial leakage current at the onset of QB (QBthreshold) and an additional stress-induced QB leakage current due to post-QB stressing. Carder separation measurement on post-QB thermal annealed oxides shows that electrons are responsible for the QBthreshold current while holes are mainly responsible for the stress-induced QB leakage current.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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