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|Title:||Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors|
|Citation:||Kong, E.Y.-J., Ivana, Zhang, X., Zhou, Q., Pan, J., Zhang, Z., Yeo, Y.-C. (2013). Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors. Solid-State Electronics 85 : 36-42. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.02.036|
|Abstract:||The formation of salicide-like source/drain contacts on III-V MOSFETs necessitates a search for suitable metals that can react with III-V materials to form ohmic contacts with low sheet resistance and contact resistivity. To advance this search, the reaction between Pd and In0.53Ga 0.47As is explored in this work. Reaction temperatures ranging from 200 to 400°C were investigated, and extensive physical and electrical characterization was performed. Pd completely reacts with In 0.53Ga0.47As after annealing at temperatures as low as 200°C for 60 s to form a very smooth and uniform Pd-InGaAs film with good interfacial quality. Pd-InGaAs formed at 250°C was found to have a work function of ∼4.6 ± 0.1 eV, sheet resistance of ∼77.3 /square for a thickness of 20 nm, and contact resistivity of ∼8.35 × 10 -5 cm2 on In0.53Ga0.47As with n-type active doping concentration of ∼2 × 1018 cm-3. With further development, Pd-InGaAs could potentially be useful as self-aligned contacts for InGaAs transistors. © 2013 Elsevier Ltd. All rights reserved.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
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