Please use this identifier to cite or link to this item:
|Title:||Investigation of optical properties of nanoporous GaN films|
|Citation:||Vajpeyi, A.P., Tripathy, S., Chua, S.J., Fitzgerald, E.A. (2005-07). Investigation of optical properties of nanoporous GaN films. Physica E: Low-Dimensional Systems and Nanostructures 28 (2) : 141-149. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physe.2005.03.007|
|Abstract:||In this study, we have investigated the optical properties of nanoporous GaN films on sapphire (0 0 0 1) prepared by UV-assisted electrochemical and electroless etching. Using various etching conditions, we can control the average pore size, pore depth and the density of pores on the GaN surface. Scanning electron microscopy (SEM) measurements reveal the nature of the pore morphology and microstructures. Optical properties of these nanoporous films have been studied using micro-photoluminescence and micro-Raman scattering. As compared to the as-grown GaN films, nanoporous layers exhibit a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The red shifted E 2 phonon peak in the Raman spectra of the porous GaN films further confirms such a stress relaxation. Microscopic optical measurements also suggest that light extraction from porous GaN surface is enhanced by such nanopatterning. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Physica E: Low-Dimensional Systems and Nanostructures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 21, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Dec 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.