Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-4526(02)01835-5
Title: Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wells
Authors: Fan, W.J.
Yoon, S.F.
Li, M.F. 
Chong, T.C. 
Keywords: Band structure
Optical gain
Quantum wells
Issue Date: May-2003
Citation: Fan, W.J., Yoon, S.F., Li, M.F., Chong, T.C. (2003-05). Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wells. Physica B: Condensed Matter 328 (3-4) : 264-270. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-4526(02)01835-5
Abstract: The band structures of Ga1-xInxNyAs1-y/GaAs compressive-strained quantum wells (QWs) are investigated using 6×6 k·p Hamiltonian including the heavy hole, light hole and spin-orbit splitting bands. By varying the well width and N composition, the effects of quantum confinement and compressive strain are examined. The valence subband energy dispersion curves, TE and TM optical gain spectra of three possible QW structures emitting at 1.3μm wavelength are given. Our calculations show that the Ga0.7In0.3N0.016As0.984/GaAs QW with well width of 43Å emitting at 1.3μm has maximum optical gain 3270cm-1 and differential gain up to about 0.88×10-15cm2 at the carrier density N=6×1018cm-3. It is suitable for high-speed laser emitting at 1.3μm wavelength. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Physica B: Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/82574
ISSN: 09214526
DOI: 10.1016/S0921-4526(02)01835-5
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