Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1561995
Title: Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms
Authors: Chim, W.K. 
Ng, T.H.
Koh, B.H.
Choi, W.K. 
Zheng, J.X.
Tung, C.H.
Du, A.Y.
Issue Date: 15-Apr-2003
Citation: Chim, W.K., Ng, T.H., Koh, B.H., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y. (2003-04-15). Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms. Journal of Applied Physics 93 (8) : 4788-4793. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1561995
Abstract: The interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechansims were studied. The electric field in the interfacial layer was found to be larger with respect to the electric field in the bulk ZrO2. The results showed the dependence of injecting field at the cathode on the electric field in the interfacial layer of the materials.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82560
ISSN: 00218979
DOI: 10.1063/1.1561995
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