Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2005.857694
DC Field | Value | |
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dc.title | Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application | |
dc.contributor.author | Yu, M.B. | |
dc.contributor.author | Xiong, Y.Z. | |
dc.contributor.author | Kim, S.-J. | |
dc.contributor.author | Balakumar, S. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Cho, B.-J. | |
dc.contributor.author | Lo, G.Q. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:30:39Z | |
dc.date.available | 2014-10-07T04:30:39Z | |
dc.date.issued | 2005-11 | |
dc.identifier.citation | Yu, M.B., Xiong, Y.Z., Kim, S.-J., Balakumar, S., Zhu, C., Li, M.-F., Cho, B.-J., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2005-11). Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF application. IEEE Electron Device Letters 26 (11) : 793-795. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.857694 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82546 | |
dc.description.abstract | We demonstrate a high-performance metal-high κ insulator-metal (MIM) capacitor integrated with a Cu/low-κ backend interconnection. The high-κ used was laminated HfO2-Al 2O3 with effective κ ∼ 19 and the low-κ dielectric used was Black Diamond with κ ∼ 2.9. The MIM capacitor (∼ 13.4 fF/μm2) achieved a Q-factor ∼ 53 at 2.5 GHz and 11.7 pF. The resonant frequency fr was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (∼ 0.93 fF/μm2) having similar capacitance 11.2 pF. The impacts of high-κ insulator and low-κ interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-κ MIM could be a promising alternative capacitor structure for future high-performance RF applications. © 2005 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.857694 | |
dc.source | Scopus | |
dc.subject | Cu/low-κ backend | |
dc.subject | High-κ | |
dc.subject | Metal-insulator-metal (MIM) capacitor | |
dc.subject | Radio frequency (RF) application | |
dc.subject | Resonant frequency | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2005.857694 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 26 | |
dc.description.issue | 11 | |
dc.description.page | 793-795 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000232821500005 | |
Appears in Collections: | Staff Publications |
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