Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1628814
Title: Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion
Authors: Tan, C.F.
Chor, E.F. 
Liu, J.
Lee, H.
Quek, E.
Chan, L.
Issue Date: 17-Nov-2003
Source: Tan, C.F., Chor, E.F., Liu, J., Lee, H., Quek, E., Chan, L. (2003-11-17). Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion. Applied Physics Letters 83 (20) : 4169-4171. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1628814
Abstract: The effectiveness in preventing clustering of silicon interstitials was explored using substitutional carbon by growing a thin layer of Si1-yCy epitaxy at the indium end-of-range (EOR) region. The aim was to eliminate the secondary EOR defects as well as to suppress the interstitially enhanced indium TED effect. The advantage of employing the epitaxial method instead of implantation in incorporating carbon into silicon was that they were effectively substitutional, which were the required carbon species for silicon interstitial sink mechanism.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82539
ISSN: 00036951
DOI: 10.1063/1.1628814
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