Please use this identifier to cite or link to this item:
https://doi.org/10.1149/2.008402ssl
DC Field | Value | |
---|---|---|
dc.title | Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon | |
dc.contributor.author | Kyaw, L.M. | |
dc.contributor.author | Dolmanan, S.B. | |
dc.contributor.author | Bera, M.K. | |
dc.contributor.author | Liu, Y. | |
dc.contributor.author | Tan, H.R. | |
dc.contributor.author | Bhat, T.N. | |
dc.contributor.author | Dikme, Y. | |
dc.contributor.author | Chor, E.F. | |
dc.contributor.author | Tripathy, S. | |
dc.date.accessioned | 2014-10-07T04:30:33Z | |
dc.date.available | 2014-10-07T04:30:33Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Kyaw, L.M., Dolmanan, S.B., Bera, M.K., Liu, Y., Tan, H.R., Bhat, T.N., Dikme, Y., Chor, E.F., Tripathy, S. (2014). Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon. ECS Solid State Letters 3 (2) : Q5-Q8. ScholarBank@NUS Repository. https://doi.org/10.1149/2.008402ssl | |
dc.identifier.issn | 21628742 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82537 | |
dc.description.abstract | This letter reports the electrical characteristics of 1.5 μm RuO x-gate AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a 200-mm diameter Si(111) substrate subjected to gate annealing in the temperature range of 600 - 900°C. The electrical characteristics of HEMTs do not change significantly up to an annealing temperature of 800°C. The maximum gm and IDSAT are 0.197 S/mm and 0.55 A/mm, respectively, when annealed at 700°C. The ON-OFF current ratio of > 107 and a sub-threshold swing of 90 mV/decade in HEMTs annealed up to 800°C showcase the crystalline quality of AlxGa 1-xN/GaN HEMT structure with good electrical contacts.©2013 The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/2.008402ssl | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/2.008402ssl | |
dc.description.sourcetitle | ECS Solid State Letters | |
dc.description.volume | 3 | |
dc.description.issue | 2 | |
dc.description.page | Q5-Q8 | |
dc.identifier.isiut | 000329120100006 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.