Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.008402ssl
Title: Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon
Authors: Kyaw, L.M.
Dolmanan, S.B.
Bera, M.K.
Liu, Y.
Tan, H.R.
Bhat, T.N.
Dikme, Y.
Chor, E.F. 
Tripathy, S.
Issue Date: 2014
Citation: Kyaw, L.M., Dolmanan, S.B., Bera, M.K., Liu, Y., Tan, H.R., Bhat, T.N., Dikme, Y., Chor, E.F., Tripathy, S. (2014). Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon. ECS Solid State Letters 3 (2) : Q5-Q8. ScholarBank@NUS Repository. https://doi.org/10.1149/2.008402ssl
Abstract: This letter reports the electrical characteristics of 1.5 μm RuO x-gate AlxGa1-xN/GaN high electron mobility transistors (HEMTs) on a 200-mm diameter Si(111) substrate subjected to gate annealing in the temperature range of 600 - 900°C. The electrical characteristics of HEMTs do not change significantly up to an annealing temperature of 800°C. The maximum gm and IDSAT are 0.197 S/mm and 0.55 A/mm, respectively, when annealed at 700°C. The ON-OFF current ratio of > 107 and a sub-threshold swing of 90 mV/decade in HEMTs annealed up to 800°C showcase the crystalline quality of AlxGa 1-xN/GaN HEMT structure with good electrical contacts.©2013 The Electrochemical Society.
Source Title: ECS Solid State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82537
ISSN: 21628742
DOI: 10.1149/2.008402ssl
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