Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1098(01)00427-6
Title: Influence of Ga+ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve
Authors: Guo, Z.B.
You, D.
Qiu, J.J.
Li, K.B.
Wu, Y.H. 
Keywords: A. Magnetic films and multilayers
B. Iradiation effects
Issue Date: 19-Nov-2001
Source: Guo, Z.B., You, D., Qiu, J.J., Li, K.B., Wu, Y.H. (2001-11-19). Influence of Ga+ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve. Solid State Communications 120 (11) : 459-462. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1098(01)00427-6
Abstract: The spin valve with the structure of IrMn/CoFe/Cu/CoFe/NiFe has been patterned to be a wire with four current-voltage probes. The detailed study of the influence of 30 KeV focused Ga+ ion beam irradiation on the magnetoresistance and exchange bias on the patterned sample has been carried out. With an increase in the ion dose, magnetoresistance and exchange bias have been found to be decreasing, and resistance has been found to be increasing. At low doses (≤1.05 × 1015 ions/cm2), the alternation in resistance is mainly attributed to atomic mixing in the interfacial regions induced by Ga+ ion irradiation. However, at high doses (≥3.51 × 1015 ions/cm2), the bulk defects generated by Ga+ ion irradiation have a significant effect on the increase of resistance. At the dose of 3.51 × 1015 ions/cm2 both GMR and AMR behaviors have been observed. © 2001 Published by Elsevier Science Ltd.
Source Title: Solid State Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/82530
ISSN: 00381098
DOI: 10.1016/S0038-1098(01)00427-6
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