Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2012.05.023
Title: Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
Authors: Da, H. 
Lam, K.-T.
Samudra, G.S. 
Liang, G. 
Chin, S.-K.
Keywords: Device performance
Doping concentration
Graphene nanoribbon
Heterojunction
Tunneling field-effect transistors
Issue Date: Nov-2012
Citation: Da, H., Lam, K.-T., Samudra, G.S., Liang, G., Chin, S.-K. (2012-11). Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors. Solid-State Electronics 77 : 51-55. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2012.05.023
Abstract: We investigated the device performance of graphene nanoribbon tunneling field-effect transistors with heterogeneous channel as a function of the contact doping concentrations. The simulations were carried out based on the non-equilibrium Green's function, coupled with a Dirac Hamiltonian model, and the roles of symmetric and asymmetric contact doping concentrations on the device performance were identified. It was observed that the device performances such as OFF-state currents (IOFF), ON-state currents (I ON) and subthreshold slopes (SSs) were greatly influenced by the source doping concentrations, while variations in drain doping concentrations changed mainly the IOFF. By applying proper asymmetric source and drain doping concentrations, low SS and large ION/IOFF ratio can be achieved, indicating that it is an alternative route to effectively enhance the device performance. © 2012 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/82529
ISSN: 00381101
DOI: 10.1016/j.sse.2012.05.023
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