Please use this identifier to cite or link to this item:
|Title:||In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric|
Indium gallium arsenide
|Source:||Zhang, X., Guo, H.X., Zhu, Z., Gong, X., Yeo, Y.-C. (2013). In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric. Solid-State Electronics 84 : 83-89. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.02.009|
|Abstract:||InGaAs channel FinFETs with self-aligned molybdenum (Mo) contacts was demonstrated using a gate-last process. By realizing Mo contacts on in situ doped n++ InGaAs source and drain and self-aligned to channel, the FinFETs achieved series resistance of ∼250 Ω μm, which is the lowest value reported-to-date for InGaAs non-planar n-MOSFETs. A FinFET with channel length of 500 nm and equivalent oxide thickness (EOT) of 3 nm has an on-state/off-state current ratio of ∼105 and peak extrinsic transconductance of 255 μS/μm at drain voltage of 0.5 V. To further reduce EOT, atomic-layer-deposited HfO2/Al2O3 high-k dielectric was integrated in InGaAs FinFETs. Good interface quality and small EOT of ∼1 nm were achieved. Forming gas annealing (FGA) was used for drive current enhancement. A 300 °C 30 min FGA leads to ∼48% increase in drive current as well as significant reduction of subthreshold swing, probably due to an improvement of the HfO2/Al2O3/InGaAs interface quality. © 2013 Elsevier Ltd.|
|Source Title:||Solid-State Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 7, 2018
WEB OF SCIENCETM
checked on Jan 31, 2018
checked on Feb 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.