Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2013.02.009
Title: In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
Authors: Zhang, X.
Guo, H.X.
Zhu, Z.
Gong, X.
Yeo, Y.-C. 
Keywords: Contact
Gate dielectric
Indium gallium arsenide
Multiple-gate transistors
Issue Date: 2013
Citation: Zhang, X., Guo, H.X., Zhu, Z., Gong, X., Yeo, Y.-C. (2013). In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric. Solid-State Electronics 84 : 83-89. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.02.009
Abstract: InGaAs channel FinFETs with self-aligned molybdenum (Mo) contacts was demonstrated using a gate-last process. By realizing Mo contacts on in situ doped n++ InGaAs source and drain and self-aligned to channel, the FinFETs achieved series resistance of ∼250 Ω μm, which is the lowest value reported-to-date for InGaAs non-planar n-MOSFETs. A FinFET with channel length of 500 nm and equivalent oxide thickness (EOT) of 3 nm has an on-state/off-state current ratio of ∼105 and peak extrinsic transconductance of 255 μS/μm at drain voltage of 0.5 V. To further reduce EOT, atomic-layer-deposited HfO2/Al2O3 high-k dielectric was integrated in InGaAs FinFETs. Good interface quality and small EOT of ∼1 nm were achieved. Forming gas annealing (FGA) was used for drive current enhancement. A 300 °C 30 min FGA leads to ∼48% increase in drive current as well as significant reduction of subthreshold swing, probably due to an improvement of the HfO2/Al2O3/InGaAs interface quality. © 2013 Elsevier Ltd.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/82525
ISSN: 00381101
DOI: 10.1016/j.sse.2013.02.009
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