Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2004.832785
DC Field | Value | |
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dc.title | Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric | |
dc.contributor.author | Kim, S.J. | |
dc.contributor.author | Cho, B.J. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Ding, S.-J. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Yu, M.B. | |
dc.contributor.author | Narayanan, B. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Kwong, D.-L. | |
dc.date.accessioned | 2014-10-07T04:30:14Z | |
dc.date.available | 2014-10-07T04:30:14Z | |
dc.date.issued | 2004-08 | |
dc.identifier.citation | Kim, S.J., Cho, B.J., Li, M.-F., Ding, S.-J., Zhu, C., Yu, M.B., Narayanan, B., Chin, A., Kwong, D.-L. (2004-08). Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectric. IEEE Electron Device Letters 25 (8) : 538-540. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.832785 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82510 | |
dc.description.abstract | It is demonstrated that the voltage coefficients of capacitance (VCC) in high-κ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-κ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm °C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 °C. © 2004 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.832785 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2004.832785 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 25 | |
dc.description.issue | 8 | |
dc.description.page | 538-540 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000222905100008 | |
Appears in Collections: | Staff Publications |
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